• DocumentCode
    3526545
  • Title

    Low Drive-Current and Wide Temperature Operation of 1.3-μm AlGaInAs-MQW BH-DFB Lasers by Laterally Enhanced Cladding Layer Growth

  • Author

    Kobayashi, Ryota ; Ito, Akinori ; Kato, Shigeo ; Muroya, Y. ; Koui, T. ; Sakata, Yuji ; Shimizu, J. ; Ishikawa, Seiichiro

  • Author_Institution
    1st Opt. Semicond. Dept., NEC Electron. Corp. Ltd., Otsu, Japan
  • fYear
    2008
  • fDate
    24-28 Feb. 2008
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Low drive-current and extremely wide temperature (from -45 to 105°C) operation were demonstrated in 10-Gb/s directly-modulated 1.3-μm AlGalnAs-MQW BH-DFB lasers with a new DH structure having a p-InP cladding layer grown by a lateral-growth technique.
  • Keywords
    III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; laser beams; optical modulation; quantum well lasers; AlGaInAs; MQW BH-DFB lasers; bit rate 10 Gbit/s; laterally enhanced cladding layer growth; low drive-current; wavelength 1.3 mum; wide temperature operation; DH-HEMTs; Distributed feedback devices; Gratings; High speed optical techniques; National electric code; Optical devices; Optical feedback; Semiconductor devices; Semiconductor lasers; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber communication/National Fiber Optic Engineers Conference, 2008. OFC/NFOEC 2008. Conference on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    978-1-55752-856-8
  • Type

    conf

  • DOI
    10.1109/OFC.2008.4528482
  • Filename
    4528482
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3526545