Design and fabrication of 1-by-4 MMI power splitter for optical communication

Author

Huilian, Ma ; Jianyi, Yang ; Qiang, Zhou ; Minghua, Wang

Author_Institution

Dept. of Inf. Sci. & Electron. Eng., Zhejiang Univ., Hangzhou, China

Volume

2

fYear

1999

fDate

18-22 Oct. 1999

Firstpage

1638

Abstract

An optical power splitter to allow for fiber connections, which is based on an MMI coupler, in GaAs/GaAlAs has been designed and fabricated. The epitaxial materials are grown by MBE. The wet chemical etching process is applied to fabricate the ribs in this device. The measuring results are presented.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; optical beam splitters; optical communication equipment; optical design techniques; optical fabrication; optical fibre couplers; 1-by-4 MMI power splitter; GaAs-GaAlAs; GaAs/GaAlAs; MBE; MMI coupler; design; epitaxial materials; fabrication; fiber connections; optical communication; optical power splitter; ribs; wet chemical etching process; Chemical processes; Gallium arsenide; Molecular beam epitaxial growth; Optical coupling; Optical design; Optical device fabrication; Optical fiber couplers; Optical fiber devices; Optical materials; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, 1999. APCC/OECC '99. Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference

Conference_Location

Beijing, China

Print_ISBN

7-5635-0402-8

Type

conf

DOI

10.1109/APCC.1999.820609

Filename

820609