B content dependence on anisotropy field of CoFeB thin film for GHz frequency use

Author

Namikawa, M. ; Munakata, M. ; Aoqui, S.-I. ; Yagi, M.

Author_Institution

Energy Electron. Lab., Sojo Univ., Ikeda, Japan

fYear

2005

fDate

4-8 April 2005

Firstpage

37

Lastpage

38

Abstract

In this study, in order to obtain the larger anisotropy field, B was added to the CoFe phase (Co₃₅Fe₆₅, Co₂₅Fe₇₅, and Co₁₅Fe₈₅ with high saturation magnetization more than 20 kG) by using synchronous triple-RF magnetron sputtering. Dependence of B content on anisotropy field and crystal structure of CoFeB thin films was investigated. Very large anisotropy field of 500-700 Oe for obtaining higher FMR frequency was obtained. The result shows a good potential for obtaining magnetic cores driven at higher frequencies of several GHz.

Keywords

boron alloys; cobalt alloys; crystal structure; ferromagnetic materials; ferromagnetic resonance; iron alloys; magnetic anisotropy; magnetic thin films; metallic thin films; sputtering; B content dependence; CoFeB; CoFeB thin film; FMR frequency; anisotropy field; crystal structure; saturation magnetization; synchronous triple-RF magnetron sputtering; Anisotropic magnetoresistance; Frequency; Iron; Magnetic anisotropy; Magnetic cores; Magnetic resonance; Perpendicular magnetic anisotropy; Saturation magnetization; Sputtering; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1463447

Filename

1463447