DocumentCode
3526618
Title
Uncooled Electroabsorption Modulator Integrated DFB Laser
Author
Makino, Shigeru ; Shinoda, Kazuma ; Kitatani, Takeshi ; Shiota, Takashi ; Aoki, Masaki ; Sasada, N. ; Naoe, K.
Author_Institution
Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan
fYear
2008
fDate
24-28 Feb. 2008
Firstpage
1
Lastpage
3
Abstract
Uncooled 10-Gbps, 1.55-μm InGaAlAs EA/DFB laser has been realized. Error free 80-km transmission was demonstrated up to 95 °C. A power penalty below 2-dB with over 9.8-dB dynamic extinction ratio was achieved over wide temperature range.
Keywords
III-V semiconductors; aluminium compounds; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium compounds; indium compounds; integrated optics; semiconductor lasers; InGaAlAs; dynamic extinction ratio; electroabsorption modulator; integrated distributed feedback lasers; power penalty; semiconductor lasers; temperature 95 degC; Chirp modulation; Energy consumption; Extinction ratio; Optical devices; Optical films; Optical materials; Power generation; Power lasers; Temperature distribution; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber communication/National Fiber Optic Engineers Conference, 2008. OFC/NFOEC 2008. Conference on
Conference_Location
San Diego, CA
Print_ISBN
978-1-55752-856-8
Type
conf
DOI
10.1109/OFC.2008.4528486
Filename
4528486
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