Title :
40-Gbit/s WGPD/HEMT monolithic photoreceiver with output voltage of 1 Vp-p
Author :
Takahata, K. ; Muramoto, Yoshifumi ; Fukano, H. ; Matsuoka, Yasutaka
Author_Institution :
NTT Photonics Labs., Atsugi, Japan
Abstract :
A long-wavelength monolithic photoreceiver was fabricated using a WGPD and a HEMT loss-compensated distributed amplifier. It provides an excellent O/E conversion factor of 125 V/W and a 3-dB-down bandwidth of 43 GHz. It also shows a clear eye opening at 30 Gbit/s with an output voltage of 1 Vp-p.
Keywords :
HEMT integrated circuits; compensation; distributed amplifiers; integrated optoelectronics; optical losses; optical receivers; p-i-n photodiodes; 1 V; 40 Gbit/s; 43 GHz; HEMT loss-compensated distributed amplifier; O/E conversion factor; WGPD/HEMT monolithic photoreceiver; clear eye opening; long-wavelength monolithic photoreceiver; output voltage; Circuits; Coatings; HEMTs; Laboratories; Optical amplifiers; Optical losses; Optical receivers; Optoelectronic devices; Photonics; Voltage;
Conference_Titel :
Communications, 1999. APCC/OECC '99. Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference
Conference_Location :
Beijing, China
Print_ISBN :
7-5635-0402-8
DOI :
10.1109/APCC.1999.820615
