DocumentCode
3526883
Title
Antiferromagnetic Mn on Fe(001) studied by spin-polarized scanning tunneling microscopy
Author
Schlickum, U. ; Janke-Gilman, N. ; Wulfhekel, W. ; Henk, J. ; Bruno, P. ; Kirschner, J.
Author_Institution
Max Planck Inst. of Microstructure Phys., Halle, Germany
fYear
2005
fDate
4-8 April 2005
Firstpage
63
Lastpage
64
Abstract
In this paper, a detailed analysis of the spin polarization of the surface of thin antiferromagnetic Mn films on Fe(001) is presented. Spin-polarized scanning tunneling microscopy (STM) measurements allows the study of the spin dependent tunneling current through a well defined barrier, a vacuum gap, as a function of the bias voltage. This offers the possibility to study magneto-transport phenomena at antiferromagnetic films in direct contact to a ferromagnet. Bias-dependent measurements performed at the Mn films on Fe(001) show a rather complex behavior of the spin contrast as function of the bias voltage. These experimental observations can be explained with model calculations based on ab-initio band structures. Based on the calculations, the spin contrast at the Mn surfaces can solely be explained by bulk states and no surface states are necessary.
Keywords
ab initio calculations; antiferromagnetic materials; electron spin polarisation; magnetic thin films; magnetic tunnelling; manganese; scanning tunnelling microscopy; Fe; Mn-Fe; ab-initio band structure; antiferromagnetic film surface; bias voltage; bulk states; magneto-transport phenomena; spin contrast; spin dependent tunneling current; spin polarized scanning tunneling microscopy; vacuum gap; Antiferromagnetic materials; Atomic layer deposition; Iron; Magnetic films; Magnetic separation; Magnetic tunneling; Magnetization; Microscopy; Substrates; Surface topography;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN
0-7803-9009-1
Type
conf
DOI
10.1109/INTMAG.2005.1463460
Filename
1463460
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