Radiation hardness evaluation of a 130 nm SiGe BiCMOS technology for the ATLAS electronics upgrade

Author

Díez, S. ; Ullán, M. ; Grillo, A.A. ; Kierstead, J. ; Kononenko, W. ; Martinez-McKinney, F. ; Newcomer, F.M. ; Rescia, S. ; Ruat, M. ; Sadrozinski, H.F.-W. ; Seiden, A. ; Spencer, E. ; Spieler, H. ; Wilder, M.

Author_Institution

Inst. de Microelectron. de Barcelona, CSIC, Barcelona, Spain

fYear

2010

fDate

Oct. 30 2010-Nov. 6 2010

Firstpage

587

Lastpage

593

Abstract

Final results for a comprehensive radiation hardness evaluation of a high performance, low cost, 130 nm SiGe BiCMOS technology are presented. After a survey of several available SiGe technologies, one was chosen in terms of performance, power consumption, radiation hardness, and cost and it is presented as a suitable technology for the front-end electronics of the Inner Detector and the Liquid Argon calorimeter. Gamma, neutron and proton irradiations have been performed up to target dose and fluence values, together with ELDRS assessment.

Keywords

BiCMOS integrated circuits; germanium radiation detectors; nuclear electronics; particle calorimetry; position sensitive particle detectors; radiation hardening (electronics); silicon radiation detectors; ATLAS electronics upgrade; SiGe BiCMOS technology; dose rate; front-end electronics; gamma irradiation effect; liquid argon calorimeter; neutron irradiation effect; power consumption; proton irradiation effect; radiation hardness evaluation; BiCMOS integrated circuits; Neutrons; Performance evaluation; Protons; Radiation effects; Silicon germanium; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE

Conference_Location

Knoxville, TN

ISSN

1095-7863

Print_ISBN

978-1-4244-9106-3

Type

conf

DOI

10.1109/NSSMIC.2010.5873828

Filename

5873828