Evaluation of monolithic Silicon-on-Insulator pixel devices thinned to 100 μm

Author

Shinsho, K. ; Hara, K. ; Arai, Y. ; Ikemoto, Y. ; Kohriki, T. ; Miyoshi, T.

Author_Institution

Grad. Sch. of Pure & Appl. Sci., Univ. of Tsukuba, Tsukuba, Japan

fYear

2010

fDate

Oct. 30 2010-Nov. 6 2010

Firstpage

646

Lastpage

649

Abstract

We are developing monolithic pixel devices utilizing a 0.2 μm Fully Depleted Silicon-on-Insulator (FD-SOI) process technology provided by OKI Semiconductor. We have investigated thinning the devices to 100 μm. Thinning enhances the feature of monolithic SOI sensors in views of minimizing the overall material and realizing full depleted devices. The latter is necessary for backside illumination, which is desirable to enhance the photo sensitivity. The wafer was thinned commercially by DISCO Corp. Small increase in the leakage current was observed associated with the thinning process. Excellent performance to infrared and red laser lights was obtained, demonstrating realization of the fully depleted pixel device.

Keywords

MOS integrated circuits; MOSFET; leakage currents; silicon radiation detectors; silicon-on-insulator; DISCO; fully depleted silicon-on-insulator process; infrared laser light; leakage current; monolithic silicon-on-insulator pixel evaluation; photosensitivity analysis; red laser light; size 100 mum; thinning process; Current measurement; Lasers; Leakage current; Lighting; Pixel; Sensors; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE

Conference_Location

Knoxville, TN

ISSN

1095-7863

Print_ISBN

978-1-4244-9106-3

Type

conf

DOI

10.1109/NSSMIC.2010.5873838

Filename

5873838