Title :
The screen printed nano-SiC film for field emission
Author :
Xiuxia, Zhang ; Shuyi, Wei ; Bingheng, Lu ; Changchun, Zhu ; Xiaoe, Wang
Author_Institution :
Sch. of Electron. & Inf. Eng., North Nat. Univ., Xian, China
Abstract :
In this paper, the low-cost screen printed method was adopted preparation uniform nano-SiC films on large areas of glass. The reunited nano-SiC was dispersed by ultrasonic before fabricating paste. After fabricating paste, the nano-SiC was further ultrasonic dispersed. The nano-SiC paste was screen printed on glass. Then nano-SiC films was sintered by the furnace controlled artificial intelligence, the anneal test was take to improve the field emission characteristics. The samples of nano-SiC film were micro-analyzed and tested the I-V characteristics. After above experiments and technics, the uniformity and stability of field emission characteristics for nano-SiC film was obtained.
Keywords :
annealing; elemental semiconductors; field emission; nanofabrication; semiconductor materials; silicon compounds; sintering; thick films; wide band gap semiconductors; I-V characteristics; SiC; anneal test; field emission; field emission characteristics; screen printed nanosemiconductor film; sintering; Annealing; Anodes; Cathodes; Crystalline materials; Glass; Organic materials; Semiconductor materials; Stability; Temperature; Testing; I-V characteristics; field emission; nano-SiC; screen printed mothed;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location :
Shizuoka
Print_ISBN :
978-1-4244-3587-6
Electronic_ISBN :
978-1-4244-3588-3
DOI :
10.1109/IVNC.2009.5271632