DocumentCode :
3527285
Title :
High performance cost effective inverter design — 1200V SPT+ IGBT chip in combination with CAL4 diode and 17mm IGBT module platform
Author :
Seng, Daniel ; Wahi, Aseem
Author_Institution :
SEMIKRON Elektron. GmbH, Nuremberg
fYear :
2006
fDate :
19-21 Dec. 2006
Firstpage :
74
Lastpage :
76
Abstract :
SEMIKRON is introducing the 2nd generation of the Soft-Punch-Through (SPT) Isolated Gate Bipolar Transistor (IGBT), the so called SPT+, in its flat 17 mm SEMiXtrade power module packages. For an optimised performance, the CAL 4 (Controlled Axial Lifetime) diode from SEMIKRON, especially designed for the fourth IGBT generation, will be used. This combination of new technologies in the latest power module package shows lower switching and conduction losses in comparison to the former chip generations. These improvements allow cost effective inverter designs together with improved softness from the chip side.
Keywords :
insulated gate bipolar transistors; invertors; CAL4 diode; IGBT module platform; SEMiX power module packages; SPT IGBT chip; cost effective inverter design; isolated gate bipolar transistor; voltage 1200 V; Costs; Design optimization; Diodes; Insulated gate bipolar transistors; Inverters; Multichip modules; Packaging; Power electronics; Power generation; Springs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics, 2006. IICPE 2006. India International Conference on
Conference_Location :
Chennai
Print_ISBN :
978-1-4244-3450-3
Electronic_ISBN :
978-1-4244-3451-0
Type :
conf
DOI :
10.1109/IICPE.2006.4685344
Filename :
4685344
Link To Document :
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