High-speed 1.1-μm-range InGaAs VCSELs

Author

Anan, T. ; Suzuki, Nobuhiro ; Yashiki, K. ; Fukatsu, K. ; Hatakeyama, H. ; Akagawa, Takeshi ; Tokutome, Keiichi ; Tsuji, Mineo

Author_Institution

Nanoelectron. Res. Labs., NEC Corp., Shiga, Japan

fYear

2008

fDate

24-28 Feb. 2008

Firstpage

1

Lastpage

3

Abstract

We have developed 1.1-μm-range high-speed VCSELs based on InGaAs-QWs for high-speed and highly reliable optical interconnections. 3-dB bandwidth up to 20 GHz and error-free 30-Gbps 100 m operations were demonstrated with oxide confined VCSELs. We also developed buried tunnel junction VCSELs to further improve the relaxation oscillation frequency limit. 3-dB bandwidth up to 24 GHz and error-free 40-Gbps operations were demonstrated with these VCSELs.

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; laser reliability; optical computing; optical interconnections; quantum well lasers; surface emitting lasers; InGaAs; bandwidth 20 GHz; bandwidth parameters; bit rate 30 Gbit/s; bit rate 40 Gbit/s; buried tunnel junction VCSEL; distance 10 m; error-free operations; high-speed QW VCSEL; highly reliable optical interconnections; oxide confined VCSEL; relaxation oscillation frequency limitation; wavelength 1.1 mum; Bandwidth; Crosstalk; Energy consumption; Frequency; Indium gallium arsenide; Large scale integration; Optical interconnections; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber communication/National Fiber Optic Engineers Conference, 2008. OFC/NFOEC 2008. Conference on

Conference_Location

San Diego, CA

Print_ISBN

978-1-55752-856-8

Type

conf

DOI

10.1109/OFC.2008.4528532

Filename

4528532