DocumentCode
3527521
Title
Field-emission characteristics of single- and double-gate all-metallic field emitter arrays fabricated by molding and self-aligned gate process
Author
Tsujino, S. ; Kirk, E. ; Vogel, T. ; Gobrecht, J.
Author_Institution
Paul Scherrer Inst., Villigen, Switzerland
fYear
2009
fDate
20-24 July 2009
Firstpage
233
Lastpage
234
Abstract
In this work, to explore the impact of the focusing gate bias on the emission current, we fabricated double-gate all-metallic field emitter arrays (FEAs) with up to 40times40 tips with different gate aperture sizes and compared the emission current with a single-gate FEA. The samples used in the study were molybdenum FEAs fabricated by molding technique.
Keywords
field emitter arrays; molybdenum; moulding; Mo; double-gate all-metallic field emitter arrays; emission current; field-emission characteristics; gate bias effect; molding process; molybdenum FEA fabrication; self-aligned gate process; single-gate all-metallic field emitter arrays; Acceleration; Apertures; Cathodes; Collimators; Diodes; Electron beams; Electron emission; Field emitter arrays; Kirk field collapse effect; Photoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location
Shizuoka
Print_ISBN
978-1-4244-3587-6
Electronic_ISBN
978-1-4244-3588-3
Type
conf
DOI
10.1109/IVNC.2009.5271650
Filename
5271650
Link To Document