• DocumentCode
    3527553
  • Title

    Image contrast dependence on the field emitter in near field emission scanning electron microscopy

  • Author

    Scholder, O. ; Kirk, T.L. ; De Pietro, L.G. ; Bähler, T. ; Ramsperger, U. ; Pescia, D.

  • Author_Institution
    Lab. fur Festkorperphys., ETH Zurich, Zurich, Switzerland
  • fYear
    2009
  • fDate
    20-24 July 2009
  • Firstpage
    197
  • Lastpage
    198
  • Abstract
    We have performed a comparative study of the image contrast enhancement dependence on field emitter tips using NFESEM. Effective tip emission radii were extracted from the Fowler-Nordheim behavior of a polycrystalline, (310), (111), and (lOO)-oriented W-tips. We observed no dramatic difference between the I-V values of the various tips. The effective emission radii are calculated using R. Corner´s formalism, at distances between 20nm and 60nm above the specimen. We observe a dependence on the emission radii in this range; however it is within the 20% error due to the k-factor uncertainty. The emitters that share similar emission radii values show a dependence on the emitter crystalline orientation, which was observed in the resolution of the mono-atomic steps on a W (110) substrate surface. Subsequent STM imaging of the W (110) surface in constant current (CC) mode confirm sharp step edges with single atom height. We evaluate the resolution of our images, as determined by the sharpness of the step edges, and compare it to theoretical values determined by the effective emission radii and tip-sample separation.
  • Keywords
    field emission; field emission electron microscopy; scanning electron microscopy; scanning tunnelling microscopy; tungsten; Fowler-Nordheim behavior; STM imaging; W; field emitter; image contrast enhancement; k-factor uncertainty; near field emission scanning electron microscopy; scanning tunnelling microscopy; Atomic measurements; Electron beams; Electron emission; Image generation; Image resolution; Kirk field collapse effect; Scanning electron microscopy; Spatial resolution; Surface topography; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
  • Conference_Location
    Shizuoka
  • Print_ISBN
    978-1-4244-3587-6
  • Electronic_ISBN
    978-1-4244-3588-3
  • Type

    conf

  • DOI
    10.1109/IVNC.2009.5271652
  • Filename
    5271652