DocumentCode
3527553
Title
Image contrast dependence on the field emitter in near field emission scanning electron microscopy
Author
Scholder, O. ; Kirk, T.L. ; De Pietro, L.G. ; Bähler, T. ; Ramsperger, U. ; Pescia, D.
Author_Institution
Lab. fur Festkorperphys., ETH Zurich, Zurich, Switzerland
fYear
2009
fDate
20-24 July 2009
Firstpage
197
Lastpage
198
Abstract
We have performed a comparative study of the image contrast enhancement dependence on field emitter tips using NFESEM. Effective tip emission radii were extracted from the Fowler-Nordheim behavior of a polycrystalline, (310), (111), and (lOO)-oriented W-tips. We observed no dramatic difference between the I-V values of the various tips. The effective emission radii are calculated using R. Corner´s formalism, at distances between 20nm and 60nm above the specimen. We observe a dependence on the emission radii in this range; however it is within the 20% error due to the k-factor uncertainty. The emitters that share similar emission radii values show a dependence on the emitter crystalline orientation, which was observed in the resolution of the mono-atomic steps on a W (110) substrate surface. Subsequent STM imaging of the W (110) surface in constant current (CC) mode confirm sharp step edges with single atom height. We evaluate the resolution of our images, as determined by the sharpness of the step edges, and compare it to theoretical values determined by the effective emission radii and tip-sample separation.
Keywords
field emission; field emission electron microscopy; scanning electron microscopy; scanning tunnelling microscopy; tungsten; Fowler-Nordheim behavior; STM imaging; W; field emitter; image contrast enhancement; k-factor uncertainty; near field emission scanning electron microscopy; scanning tunnelling microscopy; Atomic measurements; Electron beams; Electron emission; Image generation; Image resolution; Kirk field collapse effect; Scanning electron microscopy; Spatial resolution; Surface topography; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location
Shizuoka
Print_ISBN
978-1-4244-3587-6
Electronic_ISBN
978-1-4244-3588-3
Type
conf
DOI
10.1109/IVNC.2009.5271652
Filename
5271652
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