Title :
Field emission characteristics of 2D hole accumulation layer on H-terminated CVD diamond
Author :
Yamada, Takatoshi ; Nebel, C.E. ; Shikata, S.
Author_Institution :
Diamond Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
Field emission properties from 2D-hole accumulation layers on H-terminated undoped intrinsic CVD diamonds were measured. We also measured field emission properties of pand n-type semiconducting diamonds with H-terminations. Plateau in field emission properties of undoped intrinsic diamond were observed, while no pand n-type diamonds showed continuous increase of emission currents. It was considered that the discrete energy levels of hole existed in the 2D-hole accumulation layer on high quality CVD diamond films. Our results indicated that 2D-hole accumulation layer on high quality CVD diamond films was one of the candidates of field emitter materials having narrow energy range electron beams.
Keywords :
CVD coatings; diamond; electron beam effects; elemental semiconductors; field emission; semiconductor thin films; 2D hole accumulation layer; C; H-terminated CVD diamond; discrete energy levels; electron beam; emission current; field emission characteristics; high quality CVD diamond film; n-type semiconducting diamond; p-type semiconducting diamond; Anodes; Boron; Cathodes; Charge carrier density; Electron beams; Electron emission; Energy states; Semiconductivity; Semiconductor films; Surface treatment;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location :
Shizuoka
Print_ISBN :
978-1-4244-3587-6
Electronic_ISBN :
978-1-4244-3588-3
DOI :
10.1109/IVNC.2009.5271661
