Spin injection using Diluted Magnetic Semiconductor

One of the key problem in spintronics is the spin injection into semiconductors. There are several methods that had been proposed to implement this spin injection, among others are using the tunneling effect and using Diluted Magnetic Semiconductors (DMS). In this talk we review the work at ITB, Laboratory for Electronic Materials Physics using the DMS. We review the depositions of DMS in our Lab. We concentrate on the DMS having Tc higher than the room temperature to avoid the use of the required cryogenics. We had developed the deposition of GaN:Mn and the TiO₂:Co The deposition GaN:Mn is carried out using the Plasma Assisted MOCVD (PA-MOCVD). The deposition of TiO₂:Co is performed in a thermal MOCVD system The magnetic properties had been confirmed. The spin injection into GaN using GaN:Mn had not been verified by experiment. However for TiO₂:Co, an experiment using the Hanle effect has produced some qualitative experimental evidence for spin injection, using this DMS at room temperature.