DocumentCode :
3528101
Title :
Technology of single-material field-emission diode using polycrystalline diamond
Author :
Cao, Zongliang ; Hatch, Sean ; Varney, Mike ; Aslam, Dean
Author_Institution :
Micro & Nano Technol. Lab., Michigan State Univ. East Lansing, East Lansing, MI, USA
fYear :
2009
fDate :
20-24 July 2009
Firstpage :
281
Lastpage :
282
Abstract :
This paper presents the technology of single-material field-emission diode using polycrystalline diamond. I-V characteristics are studied at different poly-C doping levels, methane concentrations and temperatures. Field emission characterization system and testing of SMFD diodes are also reported in this presentation.
Keywords :
diamond; doping profiles; electron field emission; elemental semiconductors; integrated circuit interconnections; semiconductor diodes; C; I-V characteristics; SMFD diode testing; doping levels; field emission characterization; methane concentrations; polycrystalline diamond; single-material field-emission diode; Anodes; Costs; Diodes; Etching; Fabrication; Hydrogen; Iron; Plasma applications; Plasma density; Plasma temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location :
Shizuoka
Print_ISBN :
978-1-4244-3587-6
Electronic_ISBN :
978-1-4244-3588-3
Type :
conf
DOI :
10.1109/IVNC.2009.5271682
Filename :
5271682
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3528101
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