Title :
Focused ion beam modified atomic force microscope tips for scanning hall probe microscopy
Author :
Petit, D. ; Johnstone, S. ; Wood, D. ; Cowburn, R.P.
Author_Institution :
Dept. of Phys., Durham Univ., UK
Abstract :
A 50 nm thick and 40 nm wide bismuth film is thermally evaporated onto the AFM tip. A high precision focused ion beam (FIB) patterning technique is then used to image and accurately locate the apex of the tip and remove unwanted parts of the film in order to define the Hall sensor. From the generated SEM images, a cantilever and a pyramid-like tip of the FIB modified silicon nitride contact mode AFM sensor is shown.
Keywords :
Hall effect; atomic force microscopy; bismuth; focused ion beam technology; microsensors; nanopatterning; silicon compounds; 5 to 40 nm; Bi; SEM images; SiN; atomic force microscope; bismuth Hall sensor; bismuth film; contact mode; focused ion beam patterning technique; scanning electron microscope; scanning hall probe microscopy; Atomic beams; Atomic force microscopy; Bismuth; Focusing; Hall effect devices; Image generation; Image sensors; Ion beams; Scanning electron microscopy; Silicon;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1463529
