DocumentCode :
3528141
Title :
Vertical thin film field emitter array for high resolution CdTe X-ray imaging device
Author :
Tsunekaw, Yuki ; Nakagaw, Masashi ; Neo, Yoichiro ; Morii, Hisashi ; Aoki, Toru ; Mimura, Hidenori ; Nagao, Masayoshi ; Yoshida, Tomoya ; Kanemaru, S.
Author_Institution :
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
fYear :
2009
fDate :
20-24 July 2009
Firstpage :
319
Lastpage :
320
Abstract :
A photon-counting mode X-ray imaging device has a lot of interests, such as high-sensitivity and energy-discrimination. We have studied about photon-counting mode X-ray image sensor which was constructed with CdTe, and already developed for the line sensor. The imaging device that could detect X-rays by using Field Emitter Array (FEA) was proposed. The resolution of the image is decided by the spot size of the electron beam. In this report, Vertical Thin Film Field Emitter Array (VTF-FEA) was fabricated by using an Ion Induced Bending (PiB) process. And we have constructed an imaging device with VTF-FEA and the CdTe detector. And the principle inspection was performed.
Keywords :
X-ray imaging; bending; cadmium compounds; field emitter arrays; image resolution; image sensors; thin film devices; CdTe; electron beam spot size; high resolution X-ray imaging device; image resolution; image sensor; ion induced bending process; photon-counting mode; vertical thin film field emitter array; Energy resolution; Field emitter arrays; High-resolution imaging; Image resolution; Image sensors; Optical imaging; Optoelectronic and photonic sensors; Thin film devices; X-ray detection; X-ray imaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location :
Shizuoka
Print_ISBN :
978-1-4244-3587-6
Electronic_ISBN :
978-1-4244-3588-3
Type :
conf
DOI :
10.1109/IVNC.2009.5271685
Filename :
5271685
Link To Document :
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