Gate Bias Control System for Power Amplifier Using ARM Processor

In this paper the work done in the field of analysis on various control techniques used in wireless communication to control power amplifier´s important parameters. In wireless applications, the power amplifier (PA) dominates signal-chain performance in terms of power dissipation, linearity, efficiency and cost. Hence on the basis of performance concern of a power amplifier makes it possible to maximize the output power while achieving optimum linearity and efficiency. This paper discusses the elements of a monitoring-and-controlling temperature for the Power amplifiers. Failures were observed with the traditional ways of gate voltage control techniques and the failures are because of changes of load with respect to current and temperature being taken in to account and the voltage surges at the load line. With traditional gate control method power dissipation is high. The effects of temperature making the trade-offs between the above mentioned Power amplifier parameters which determine the optimum bias condition for the Power amplifier transistor. The drain current should be maintained at an optimum value over temperature and time that can significantly improve the overall performance of the PA gate bias control system. The use of ARM micro controller makes the system more efficient, cost effective way and a more efficient control system with the use of real time operations using real time operating system uC/OSII.