376 nm ultra-violet laser diode annealing of Si thin-films

Author

Wenchang Yeh ; Araishi, T. ; Morioka, Ryota

Author_Institution

Dept. of Mech., Electr. & Electron. Eng., Shimane Univ., Matsue, Japan

fYear

2012

fDate

11-14 Nov. 2012

Firstpage

1

Lastpage

3

Abstract

376 nm ultra-violet laser diode was used for crystallization of Si thin-film on glass substrate for thin-film solar cell application. Laser beam was focused on Si film with a dimension of 1.5 × 8μm and it is scanned over Si film with velocities of among 0.3 m/s to 5.2 m/s. From scanning electron microscopy (SEM) and Raman scattering spectroscopy (Raman), it is found that lateral crystallization was induced in Si films, with its crystallinity comparable to that of excimer laser crystallized Si film.

Keywords

Raman spectra; crystallisation; laser beam annealing; scanning electron microscopy; semiconductor thin films; solar cells; Raman scattering spectroscopy; SEM; Si; excimer laser crystallized silicon film; glass substrate; laser beam; lateral crystallization; scanning electron microscopy; thin-film solar cell application; ultra-violet laser diode; ultraviolet laser diode annealing; Annealing; Diode lasers; Films; Gas lasers; Laser beams; Semiconductor lasers; Silicon; laser annealing; laser diode; poly-Si; solar cell; thin-film;

fLanguage

English

Publisher

ieee

Conference_Titel

Renewable Energy Research and Applications (ICRERA), 2012 International Conference on

Conference_Location

Nagasaki

Print_ISBN

978-1-4673-2328-4

Electronic_ISBN

978-1-4673-2329-1

Type

conf

DOI

10.1109/ICRERA.2012.6477344

Filename

6477344