DocumentCode
3528298
Title
Noise and interference characterization for MLC flash memories
Author
Moon, Jaekyun ; No, Jaehyeong ; Lee, Sangchul ; Kim, Sangsik ; Yang, Joongseop ; Chang, Seung Ho
Author_Institution
Dept. of Electr. Eng., KAIST, Daejeon, South Korea
fYear
2012
fDate
Jan. 30 2012-Feb. 2 2012
Firstpage
588
Lastpage
592
Abstract
This paper provides statistical analysis on real data taken from state-of-the-art MLC NAND flash memory cells. The analysis allows separation of different sources affecting the output values of the cell. Interference due to floating gate coupling is isolated. The effect of noise and interference on the victim cell after repeated program/erase cycles as well as baking is investigated.
Keywords
NAND circuits; flash memories; integrated circuit noise; interference (signal); statistical analysis; MLC NAND flash memory cells; floating gate coupling; interference characterization; noise effect; program-erase cycles; statistical analysis; Aging; Erbium; Interference; Noise; Programming; Random variables; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Computing, Networking and Communications (ICNC), 2012 International Conference on
Conference_Location
Maui, HI
Print_ISBN
978-1-4673-0008-7
Electronic_ISBN
978-1-4673-0723-9
Type
conf
DOI
10.1109/ICCNC.2012.6167491
Filename
6167491
Link To Document