DocumentCode
3528301
Title
Simulation method and application for the hot carrier-induced device degradation of NMOSFET
Author
Lee, Sun-Ghil ; Choi, Jae-Hoon ; Kim, Sang-Yong ; Nam, Myung-Hee ; Lee, Joo-Hyeon ; Seo, Kang-Bong ; Yoon, Han-Sub
Author_Institution
Dept. of Device Phys., Hyundai Electron. Ind. Co Ltd., Ichon, South Korea
fYear
1999
fDate
1999
Firstpage
49
Lastpage
52
Abstract
Hot carriers deteriorate the interface between Si and gate oxide, which causes the change of current level. We suggest a method for simulating hot carrier-induced device degradation. Based on the present model, we are able to calculate degraded I-V characteristics with time using 2-D process simulation TSUPREM-4 and 2-D device simulator MEDICI. We compare simulated results with experimental ones
Keywords
MOSFET; hot carriers; semiconductor device models; 2D device simulation; 2D process simulation; I-V characteristics; MEDICI; NMOSFET; Si-gate oxide interface; TSUPREM-4; hot carrier-induced device degradation; model; Data mining; Degradation; Electron traps; FETs; Hot carriers; MOSFET circuits; Medical simulation; Occupational stress; Physics; Shape control;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location
Seoul
Print_ISBN
0-7803-5727-2
Type
conf
DOI
10.1109/ICVC.1999.820818
Filename
820818
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