DocumentCode :
3528337
Title :
Study of techniques for improving back-contact of CuO-nanowire emitters in a microstructure
Author :
Zhan, R.Z. ; Chen, Jun ; Deng, S.Z. ; Xu, N.S.
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
fYear :
2009
fDate :
20-24 July 2009
Firstpage :
303
Lastpage :
304
Abstract :
In this study, the fabrication technologies for a gated CuO nanowire emitter were investigated. It is found that the interlayer between CuO nanoemitter and cathode electrode is crucial to achieve good emission. Attempts were made to improve the interlayer structure, including using multilayer-metal thin film electrode and etch residue cleaning.
Keywords :
cathodes; copper compounds; crystal microstructure; nanofabrication; nanowires; thin films; CuO; cathode electrode; etch residue cleaning; interlayer structure; microstructure; multilayer-metal thin film electrode; nanowire emitters; Anodes; Cathodes; Electrodes; Etching; Fabrication; Green cleaning; Insulation; Microstructure; Nanowires; Sputtering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location :
Shizuoka
Print_ISBN :
978-1-4244-3587-6
Electronic_ISBN :
978-1-4244-3588-3
Type :
conf
DOI :
10.1109/IVNC.2009.5271699
Filename :
5271699
Link To Document :
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