• DocumentCode
    3528354
  • Title

    Increased radiation hardness of CdZnTe by laser radiation

  • Author

    Medvid, A. ; Mychko, A. ; Dauksta, E. ; Naseka, Y. ; Crocco, J. ; Dieguez, E.

  • Author_Institution
    Riga Tech. Univ., Riga, Latvia
  • fYear
    2010
  • fDate
    Oct. 30 2010-Nov. 6 2010
  • Firstpage
    1014
  • Lastpage
    1016
  • Abstract
    The aim of this work is to study the possibility to increase the radiation hardness of Cd0.9Zn0.1Te crystal using laser radiation. Pulsed Nd:YAG laser for this aim was used. Estimation of the crystalline lattice defects before and after irradiation by γ-ray using photoluminescence method in the experiments was applied. Experimental results showed the increase of the radiation hardness of CdZnTe crystal after irradiation by laser at intensity 1.20-1.80 MW/cm2.
  • Keywords
    crystal defects; gamma-ray effects; photoluminescence; radiation hardening (electronics); semiconductor counters; CdZnTe crystal radiation hardness; crystalline lattice defect; gamma-ray irradiation effect; laser radiation effect; photoluminescence method; Crystals; Detectors; Laser excitation; Photoluminescence; Radiation effects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE
  • Conference_Location
    Knoxville, TN
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-9106-3
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2010.5873918
  • Filename
    5873918
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3528354