Title :
Study of vacuum microelectronic device using zinc oxide nanowires by low temperature solution phase method
Author :
Fang, B. ; She, J.C. ; Liu, J. ; Xu, N.S.
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
Abstract :
This work has developed techniques for fabrication of gated field emission device using ZnO nanowires (NWs) based on both microfabrication techniques and low temperature (~80 degC) solution grown method.
Keywords :
II-VI semiconductors; microfabrication; nanowires; semiconductor quantum wires; vacuum microelectronics; zinc compounds; ZnO; gated field emission device; low temperature solution phase method; microfabrication; vacuum microelectronics; zinc oxide nanowires; Cathodes; Current density; Glass; Indium tin oxide; Microelectronics; Nanostructured materials; Nanowires; Temperature; Voltage; Zinc oxide;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location :
Shizuoka
Print_ISBN :
978-1-4244-3587-6
Electronic_ISBN :
978-1-4244-3588-3
DOI :
10.1109/IVNC.2009.5271700
