• DocumentCode
    3528384
  • Title

    Investigation of thin film transistor based on ZnO nanowires via screen-printing method

  • Author

    Zhang, Jin ; Lei, Wei ; Wang, Baoping

  • Author_Institution
    Display R&D center, Southeast Univ., Nanjing, China
  • fYear
    2009
  • fDate
    20-24 July 2009
  • Firstpage
    301
  • Lastpage
    302
  • Abstract
    In this paper, a new kind of thin film transistors based on ZnO nanowires by screen-printing method is fabricated. The nanowires are made from hydrothermal method and the mobility of the device is about 0.95 cm2/VS and the transparency of the device is about 70% which indicates the practical use in flexible and transparent display industry.
  • Keywords
    II-VI semiconductors; nanoelectronics; nanowires; thick film devices; thin film transistors; wide band gap semiconductors; zinc compounds; ZnO; hydrothermal method; nanowires; screen-printing method; thin film transistor; transparent display industry; Coatings; Electron mobility; Flat panel displays; Indium tin oxide; Nanowires; Optoelectronic devices; Research and development; Sun; Thin film transistors; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
  • Conference_Location
    Shizuoka
  • Print_ISBN
    978-1-4244-3587-6
  • Electronic_ISBN
    978-1-4244-3588-3
  • Type

    conf

  • DOI
    10.1109/IVNC.2009.5271702
  • Filename
    5271702
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3528384