Title :
Investigation of thin film transistor based on ZnO nanowires via screen-printing method
Author :
Zhang, Jin ; Lei, Wei ; Wang, Baoping
Author_Institution :
Display R&D center, Southeast Univ., Nanjing, China
Abstract :
In this paper, a new kind of thin film transistors based on ZnO nanowires by screen-printing method is fabricated. The nanowires are made from hydrothermal method and the mobility of the device is about 0.95 cm2/VS and the transparency of the device is about 70% which indicates the practical use in flexible and transparent display industry.
Keywords :
II-VI semiconductors; nanoelectronics; nanowires; thick film devices; thin film transistors; wide band gap semiconductors; zinc compounds; ZnO; hydrothermal method; nanowires; screen-printing method; thin film transistor; transparent display industry; Coatings; Electron mobility; Flat panel displays; Indium tin oxide; Nanowires; Optoelectronic devices; Research and development; Sun; Thin film transistors; Zinc oxide;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location :
Shizuoka
Print_ISBN :
978-1-4244-3587-6
Electronic_ISBN :
978-1-4244-3588-3
DOI :
10.1109/IVNC.2009.5271702
