DocumentCode
3528387
Title
Design and Analysis of High Speed Body Bias Control and CLSA Sense Amplifier
Author
Reger, Ratan Lal ; Verma, K. ; Jaiswal, Sanjay Kumar ; Jain, Divya
Author_Institution
VLSI Design, ITM Coll., Bhilwara, India
fYear
2013
fDate
21-23 Dec. 2013
Firstpage
383
Lastpage
386
Abstract
This paper deals with a design and analysis of current latch sense amplifier with a current-reuse technique (Body bias control sense amplifier) and conventional CLSA sense amplifier. The Body bias control sense amplifier is capable of high-speed pre-charging with little increase in power dissipation. Body bias control sense amplifier also controls body bias voltages of pre-charge transistors rather than in a conventional CLSA. Also we find that sensing time of body bias control sense amplifier is less as it depends upon threshold voltage. We also verify the various result like Slew Rate, Power consumption, Voltage Gain, Offset Voltage Sensitivity at 180 nano meter technology for both type of sense amplifier. From these result we see that when Vdd increases circuit ability to avoid the noise increases but power consumption also increases and accordingly current consumption increases. Simulation result shows that speed of Sense Amplifier decreases but interesting improvement in current consumption is obtained. Sensitivity of conventional CLSA sense amplifier is 50mV and for body bias control sense amplifier is 35 mV.
Keywords
flip-flops; low-power electronics; preamplifiers; voltage control; CLSA sense amplifier; body bias control sense amplifier; body bias voltage controls; current consumption; current latch sense amplifier; current-reuse technique; high speed body bias control; high-speed pre-charging; offset voltage sensitivity; power consumption; power dissipation; pre-charge transistors; size 180 nm; slew rate; threshold voltage; voltage 35 mV; voltage 50 mV; voltage gain; Delays; Noise; Power demand; Random access memory; Sensitivity; Threshold voltage; Transistors; CLSA; Offset voltage; Sense Amplifier; Sensitivity; Voltage gain; slew rate;
fLanguage
English
Publisher
ieee
Conference_Titel
Machine Intelligence and Research Advancement (ICMIRA), 2013 International Conference on
Conference_Location
Katra
Type
conf
DOI
10.1109/ICMIRA.2013.81
Filename
6918858
Link To Document