Title :
Hydrogenation of Si(110) surface due to hydrogen plasma exposure, investigated with in-situ MIR-IRAS
Author :
Takmi, Y. ; Takaki, Yumi ; Shinohara, Minoru ; Matsuda, Yuuki ; Fujiyama, Hiroshi
Author_Institution :
Grad. Sch. of Eng., Nagasaki Univ., Nagasaki, Japan
Abstract :
Hydrogenation of Si(110) surface due to hydrogen plasma was investigated, using in-situ infrared spectroscopy in multiple internal reflection geometry (in-situ MIR-IRAS). The amorhpous layer was formed. Especially, the SiH2 components were finally formed in the amorphous layer. The formation of the SiH2 is performed with 0.5-order reaction, in a comparion with the hydrogen exposure time. It is suggested that two hydrogen atoms are required to form SiH2.
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogenation; infrared spectroscopy; plasma applications; silicon; silicon compounds; solar cells; surface treatment; 0.5-order reaction; Si(110) surface; Si-SiH2; amorphous layer; hydrogen atoms; hydrogen exposure time; hydrogen plasma exposure; hydrogenation; in-situ MIR-IRAS; in-situ infrared spectroscopy; multiple internal reflection geometry; Absorption; Hydrogen; Plasmas; Silicon; Spectroscopy; Substrates; Surface treatment; Hydrogenation; Si; hydrogen plasma; infrared spectroscopy; solution plasma;
Conference_Titel :
Renewable Energy Research and Applications (ICRERA), 2012 International Conference on
Conference_Location :
Nagasaki
Print_ISBN :
978-1-4673-2328-4
Electronic_ISBN :
978-1-4673-2329-1
DOI :
10.1109/ICRERA.2012.6477364
