Title :
Effects of oxygen pressure on ferromagnetic ordering in Mn-doped ZnO thin films
Author :
Shim, W.Y. ; Jeon, K.A. ; Lee, K.I. ; Lee, S.Y. ; Jung, M.H. ; Lee, W.Y.
Author_Institution :
Dept. of Mater. Sci. & Eng., Yonsei Univ., Seoul, South Korea
Abstract :
Magnetic and magnetotransport properties of Mn-doped ZnO thin films grown by pulsed laser deposition are studied. These films are grown at various substrate temperature ranging from 20-800°C. Hysteresis loops of the doped thin films grown at 800°C under oxygen pressures of 0.1 Torr and 0.001 Torr are measured at 4 K and 300 K. Results show that regardless of the oxygen pressure, the Mn-doped ZnO thin films exhibit ferromagnetic ordering at 4 K, although a clear difference between two samples is found in saturation magnetization and coercivity. On the other hand, the ferromagnetic behavior in the film grown under 0.001 Torr is found to disappear. Large magnetoresistance is observed in the film grown at 700°C which indicates that the spin splitting exists and is caused by strong s-d exchange coupling between the conducting carriers and localized spins of Mn ions. Also, extraordinary Hall effect is observed at 4 K in the Mn-doped film grown at 700°C under 0.1 Torr.
Keywords :
Hall effect; II-VI semiconductors; coercive force; exchange interactions (electron); ferromagnetic materials; magnetic hysteresis; magnetic thin films; magnetoresistance; manganese; pulsed laser deposition; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; wide band gap semiconductors; zinc compounds; 0.001 torr; 0.1 torr; 20 to 800 degC; 300 K; 4 K; ZnO:Mn; coercivity; conducting carriers; doped thin films; extraordinary Hall effect; ferromagnetic ordering; localized spins; magnetoresistance; oxygen pressures; pulsed laser deposition; s-d exchange coupling; saturation magnetization; spin splitting; substrate temperature; Magnetic films; Magnetic properties; Optical pulses; Pulsed laser deposition; Saturation magnetization; Sputtering; Substrates; Temperature distribution; Transistors; Zinc oxide;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1463561