Magnetic, electrical properties and structure of Cr-AIN and Mn-AIN thin films grown on Si substrates

Author

Endo, Y. ; Sato, T. ; Takita, A. ; Kawamura, Y. ; Yamamoto, M.

Author_Institution

Dept. of Mater. Sci. & Eng., Osaka Univ., Japan

fYear

2005

fDate

4-8 April 2005

Firstpage

269

Lastpage

270

Abstract

The structure, magnetic properties and electrical properties of Al_0.93Cr_0.07N and Al_0.91Mn_0.09N thin films grown by reactive dc magnetron sputtering on the thermal oxidized Si (100) substrate have been studied in detail. High-angle X-ray diffraction and transmission electron microscopy are used to determine the crystallographic nature of the specimen. XRD profiles reveal that the crystal orientation of the film plane is mainly parallel to (0002) planes. Magnetization measurements reveal that room temperature ferromagnetism is not observed in each specimen. Also, the magnetic state at 10 K changes from a paramagnetic state to a superparamagnetic state with decreasing temperature. Electrical resistivity is enhanced exponentially as temperature decreases.

Keywords

X-ray diffraction; aluminium compounds; chromium; crystal orientation; electrical resistivity; magnetic thin films; magnetic transitions; magnetisation; manganese; semiconductor thin films; semimagnetic semiconductors; sputtered coatings; superparamagnetism; transmission electron microscopy; 10 K; 293 to 298 K; Al_0.91Mn_0.09N; Al_0.93Cr_0.07N; Si; XRD; crystal orientation; electrical resistivity; ferromagnetism; high-angle X-ray diffraction; magnetic state; magnetization; paramagnetic state; reactive dc magnetron sputtering; room temperature; superparamagnetic state; thermal oxidized substrate; thin films; transmission electron microscopy; Chromium; Crystallography; Magnetic films; Magnetic properties; Semiconductor thin films; Sputtering; Substrates; Temperature; Transmission electron microscopy; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1463563

Filename

1463563