Title :
Magnetic properties of manganese germanium diphosphide and manganese phosphide grown by molecular beam epitaxy technique
Author :
Minami, K. ; Jogo, J. ; Mori, M. ; Ishibashi, Takayuki ; Sato, K.
Author_Institution :
Graduate Sch. of Eng., Tokyo Univ. of Agric. & Technol., Japan
Abstract :
MnGeP2 and MnP thin films are grown on GaAs substrates using molecular beam epitaxy technique and their magnetic properties are compared. The easy axis of magnetization in MnGeP2 is in-plane and that of MnP is perpendicular. Results indicate the magnetic anisotropy of the two samples is different and both show ferromagnetic behavior. This suggests that ferromagnetic behavior of MnGeP2 is not originating from the precipitated MnP components.
Keywords :
ferromagnetic materials; germanium compounds; magnetic anisotropy; magnetic epitaxial layers; magnetic semiconductors; manganese compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; GaAs; MnGeP2; MnP; ferromagnetic behavior; magnetic anisotropy; magnetization easy axis; molecular beam epitaxy; thin films; Epitaxial growth; Gallium arsenide; Germanium; Magnetic films; Magnetic materials; Magnetic properties; Manganese; Molecular beam epitaxial growth; SQUIDs; Substrates;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1463564
