Title :
Investigation of half-tone phase shift mask with FIB and blue laser repair
Author :
Bae, Sang Man ; Lee, Do Hwa ; Lee, Hee Mok ; Gill, Myung Goon ; Kim, Bong Ho ; Ahn, Dong Jun
Author_Institution :
Memory R&D Div., Hyundai Electron. Co., Kyoung-Ki, South Korea
Abstract :
We discuss a duplicate repairing process for opaque repair by means of a Ga+ focussed ion beam (FIB) and a blue laser scanning on a MoSiON phase shift mask. We show the pattern fidelity and edge roughness on the wafer and photomask substrates. The aerial images and intensity profiles produced by the AIMS tool show the fine resolution capability. Although somewhat resolved, we must consider the specifications of CD control for next generation devices such as design rules of 0.15 μm. We evaluate the printability of the half-tone phase shift mask with i-line and KrF steppers after defect repair. We also confirm the accuracy of edge repair, Ga+ deep implantation effects and the environmental stability of FIB and blue laser repair tools. Finally, we measure the topography of the repaired photomask by AFM and AIMS
Keywords :
atomic force microscopy; focused ion beam technology; laser ablation; laser beam applications; maintenance engineering; phase shifting masks; surface topography; 0.15 mum; AFM; AIMS tool; CD control specifications; FIB repair; Ga+ focussed ion beam; Ga+ deep implantation effects; KrF stepper; MoSiON; MoSiON phase shift mask; aerial images; attenuated phase shift mask; blue laser repair; defect repair; design rules; duplicate repairing process; edge repair accuracy; environmental stability; fine resolution capability; half-tone phase shift mask; i-line stepper; intensity profiles; mask printability; next generation devices; opaque repair; pattern fidelity; photomask substrate; wafer edge roughness; Adhesives; Focusing; Gas lasers; Laser ablation; Laser stability; Laser tuning; Power lasers; Pulsed laser deposition; Research and development; Substrates;
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
DOI :
10.1109/ICVC.1999.820859