DocumentCode
3529062
Title
Development of 0.5 μm BiCMOS device model library for RFIC applications
Author
Park, Seong-Ho Park ; Lim, Gwang-Hyun ; Lee, Yong-Hee
Author_Institution
Syst. LSI Bus., Samsung Electron., Yongin, South Korea
fYear
1999
fDate
1999
Firstpage
178
Lastpage
181
Abstract
In this paper a 0.5 μm BiCMOS device model library developed for RFIC applications has been introduced. The modeling methodology, the RF device characteristics available in this library, their equivalent circuit models with high-frequency parasitics, and modeling results have been described
Keywords
BiCMOS integrated circuits; MMIC; UHF integrated circuits; circuit simulation; equivalent circuits; integrated circuit modelling; 0.5 micron; BiCMOS device model library; RF device characteristics; RFIC applications; equivalent circuit models; high-frequency parasitics; modeling methodology; BiCMOS integrated circuits; Equivalent circuits; Frequency; Inductors; Libraries; MOSFETs; Radiofrequency integrated circuits; Scattering parameters; Solid modeling; Spirals;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location
Seoul
Print_ISBN
0-7803-5727-2
Type
conf
DOI
10.1109/ICVC.1999.820867
Filename
820867
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