DocumentCode :
3529062
Title :
Development of 0.5 μm BiCMOS device model library for RFIC applications
Author :
Park, Seong-Ho Park ; Lim, Gwang-Hyun ; Lee, Yong-Hee
Author_Institution :
Syst. LSI Bus., Samsung Electron., Yongin, South Korea
fYear :
1999
fDate :
1999
Firstpage :
178
Lastpage :
181
Abstract :
In this paper a 0.5 μm BiCMOS device model library developed for RFIC applications has been introduced. The modeling methodology, the RF device characteristics available in this library, their equivalent circuit models with high-frequency parasitics, and modeling results have been described
Keywords :
BiCMOS integrated circuits; MMIC; UHF integrated circuits; circuit simulation; equivalent circuits; integrated circuit modelling; 0.5 micron; BiCMOS device model library; RF device characteristics; RFIC applications; equivalent circuit models; high-frequency parasitics; modeling methodology; BiCMOS integrated circuits; Equivalent circuits; Frequency; Inductors; Libraries; MOSFETs; Radiofrequency integrated circuits; Scattering parameters; Solid modeling; Spirals;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
Type :
conf
DOI :
10.1109/ICVC.1999.820867
Filename :
820867
Link To Document :
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