Title :
Improved small-signal modeling of RF Si MOSFETs
Author :
Lee, Seonghearn ; Yu, Hyun Kyu
Author_Institution :
Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Yongin, South Korea
Abstract :
We investigate non-physical phenomena occurring in extracting MOSFET parameters of a conventional small-signal model in detail. In order to eliminate these phenomena, an improved small-signal model connecting the drain-bulk junction capacitance into the external source has been developed. This improved model allows us to extract frequency-independent parameters in the wide range of frequency while maintaining the physical validity. Good agreement between measured and modeled gain plots is achieved in the frequency range of 0.5 to 39.5 GHz
Keywords :
MOSFET; UHF field effect transistors; elemental semiconductors; equivalent circuits; microwave field effect transistors; semiconductor device models; silicon; 0.5 to 39.5 GHz; Si; Si RF MOSFETs; drain-bulk junction capacitance; frequency-independent parameters extraction; small-signal modeling; CMOS technology; Data mining; Electrical resistance measurement; Equivalent circuits; Frequency measurement; MOSFETs; Parameter extraction; Radio frequency; Scattering parameters; Semiconductor device modeling;
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
DOI :
10.1109/ICVC.1999.820873
