DocumentCode
3529152
Title
Improved small-signal modeling of RF Si MOSFETs
Author
Lee, Seonghearn ; Yu, Hyun Kyu
Author_Institution
Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Yongin, South Korea
fYear
1999
fDate
1999
Firstpage
197
Lastpage
200
Abstract
We investigate non-physical phenomena occurring in extracting MOSFET parameters of a conventional small-signal model in detail. In order to eliminate these phenomena, an improved small-signal model connecting the drain-bulk junction capacitance into the external source has been developed. This improved model allows us to extract frequency-independent parameters in the wide range of frequency while maintaining the physical validity. Good agreement between measured and modeled gain plots is achieved in the frequency range of 0.5 to 39.5 GHz
Keywords
MOSFET; UHF field effect transistors; elemental semiconductors; equivalent circuits; microwave field effect transistors; semiconductor device models; silicon; 0.5 to 39.5 GHz; Si; Si RF MOSFETs; drain-bulk junction capacitance; frequency-independent parameters extraction; small-signal modeling; CMOS technology; Data mining; Electrical resistance measurement; Equivalent circuits; Frequency measurement; MOSFETs; Parameter extraction; Radio frequency; Scattering parameters; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location
Seoul
Print_ISBN
0-7803-5727-2
Type
conf
DOI
10.1109/ICVC.1999.820873
Filename
820873
Link To Document