DocumentCode :
3529200
Title :
CoSi2 junction leakage with Ti or TiN capping, and device characteristics in embedded DRAM with stack capacitor
Author :
Lee, Jong-Rim ; Lee, Soo-Mi ; Kim, Jong-Chae ; Lee, Wook-Ha ; Yang, Won-Suk ; Lee, Sang-Don
Author_Institution :
Hyundai Microelectron. Co. Ltd., Cheongju, South Korea
fYear :
1999
fDate :
1999
Firstpage :
208
Lastpage :
210
Abstract :
This paper presents the properties for CoSi2 junction used to realize embedded DRAM and logic (EDL). In high thermal processes for EDL, TiN capping shows considerably better junction leakage and device characteristics than Ti capping
Keywords :
DRAM chips; MOS digital integrated circuits; VLSI; cobalt compounds; integrated circuit metallisation; integrated logic circuits; leakage currents; CoSi2; CoSi2 junction leakage; Ti; Ti capping; TiN; TiN capping; device characteristics; embedded DRAM; junction leakage characteristics; logic; stack capacitor; Capacitors; Diodes; Heat treatment; Leakage current; MOSFETs; Probability; Random access memory; Resistance heating; Thermal degradation; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
Type :
conf
DOI :
10.1109/ICVC.1999.820878
Filename :
820878
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3529200
بازگشت