Title :
Optimum barrier layer for Al-PMD (preferential metal deposition) process
Author :
Kim, Byung Hee ; Lee, Jong Myeong ; Chae, Yun Sook ; Kang, Sang Bom ; Choi, Gil Heyun ; Park, Young Wook ; Lee, Sang In
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Yongin, South Korea
Abstract :
The barrier properties and the reliability of Al to Si contacts using different types of TiN in the Al-PMD process are investigated. The Al-PMD process is shown to be an excellent metallization technique for high density devices such as Giga-bit DRAMs and beyond when ACVD-TiN is used as a barrier layer. ACVD-TiN has the best diffusion barrier properties due to its high density and good conformality
Keywords :
CVD coatings; aluminium; conformal coatings; contact resistance; diffusion barriers; integrated circuit metallisation; integrated circuit reliability; leakage currents; titanium compounds; ACVD-TiN; Al preferential metal deposition process; Al-TiN-Si; Al/Si contacts; Giga-bit DRAMs; TiN diffusion barrier; ULSI metallization; barrier properties; conformality; contact resistance; high density devices; junction leakage current; metallization technique; reliability; Annealing; Artificial intelligence; Conductivity; Contact resistance; Filling; Gas insulated transmission lines; Grain boundaries; Metallization; Tin; Ultra large scale integration;
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
DOI :
10.1109/ICVC.1999.820884
