Title :
Comparison of the characteristics of tunneling oxide and tunneling ON for p-channel nano-crystal memory
Author :
Han, Kwangseok ; Kim, Ilgweon ; Shin, Hyungcheol
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
Abstract :
The nano-crystal memory operates at low voltage compared to conventional flash memory due to thinner tunneling dielectrics since the spacing between the Si dots suppresses the charge loss through lateral paths. Recently, p-channel nano-crystal memory, which stores holes instead of electrons as the information, has been reported to have good characteristics compared with EEPROM. In this paper, the characteristics of tunneling oxide and tunneling ON is compared for p-channel nano-crystal memory
Keywords :
dielectric thin films; nanotechnology; semiconductor storage; tunnelling; Si; charge loss; hole storage; p-channel nano-crystal memory; tunneling ON; tunneling dielectrics; tunneling oxide; Dielectric losses; Dielectric substrates; Electrons; Equations; Hysteresis; Low voltage; Nanoscale devices; Silicon; Threshold voltage; Tunneling;
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
DOI :
10.1109/ICVC.1999.820889
