The effects of post annealing on oxide-charge-to-breakdown and interface state in tungsten polycide gate

Author

Lee, Byunghak ; Kim, Sangcheol ; Kim, Dongchan ; Kim, Taewoo ; Park, Jungyeol ; Choe, Youngho ; Woo, Youngtag ; Euikyu Ryou ; Jongoh Kim ; Om, Jaechul

Author_Institution

Memory R&D Div., Hyundai Electron. Ind. Co. Ltd., Ichon, South Korea

fYear

1999

fDate

1999

Firstpage

241

Lastpage

244

Abstract

The dependence of oxide charge-to-breakdown (Q_BD) and device degradation on the combined post annealing of RTA and FA in the tungsten polycide gate technology have been experimentally investigated. The experimental results suggest that Q_BD and degradation are improved by lower temperature and shorter time of RTA. Whereas the FA/RTA annealing sequence is more advantageous for improving Q_BD, the RTA/FA annealing sequence is good for improving device degradation

Keywords

MOS capacitors; MOSFET; annealing; interface states; rapid thermal annealing; semiconductor device breakdown; semiconductor device metallisation; semiconductor device reliability; tungsten compounds; MOS capacitor; MOSFET; RTA; SiO₂-Si; WSi; WSi_x polycide gate technology; annealing sequence; device degradation; furnace annealing; interface state; oxide reliability; oxide-charge-to-breakdown; post annealing; Degradation; Design for quality; Doping; Interface states; MOSFETs; Rapid thermal annealing; Stress; Temperature; Thermal resistance; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI and CAD, 1999. ICVC '99. 6th International Conference on

Conference_Location

Seoul

Print_ISBN

0-7803-5727-2

Type

conf

DOI

10.1109/ICVC.1999.820892

Filename

820892