Ultra thin-oxide damage from gate charging during PETEOS deposition processing

Author

Kim, Youhg Gwan ; Kim, Hazoong ; Youn, Kang-Sik ; Kang, Dae-Gwan ; Hwang, Jeong-Mo

Author_Institution

R&D Div., Hyundai MicroElectron. Co. Ltd., Chongju, South Korea

fYear

1999

fDate

1999

Firstpage

245

Lastpage

248

Abstract

This paper presents a study of plasma-enhanced tetraethylorthosilicate oxide process (PETEOS) induced charging damage to thin gate oxide reliability of p-and n-MOS after gate poly processing. We explain the plasma induced gate oxide charging mechanism with the differences of ultra thin oxide (45 Å) breakdown characteristics of p- and n-MOS capacitors

Keywords

MOS capacitors; plasma materials processing; semiconductor device breakdown; semiconductor device metallisation; semiconductor device reliability; surface charging; 45 angstrom; MOS capacitors; PETEOS deposition processing; charging damage; gate charging; nMOS capacitors; pMOS capacitors; plasma induced gate oxide charging mechanism; plasma-enhanced tetraethylorthosilicate oxide process; thin gate oxide reliability; ultra thin oxide breakdown characteristics; ultra thin-oxide damage; Capacitors; Dielectrics; Electric breakdown; Plasma density; Plasma materials processing; Plasma measurements; Plasma properties; Plasma sources; Plasma temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI and CAD, 1999. ICVC '99. 6th International Conference on

Conference_Location

Seoul

Print_ISBN

0-7803-5727-2

Type

conf

DOI

10.1109/ICVC.1999.820894

Filename

820894