Title :
Thermal stability in CoFe/Os/OsMn films
Author :
Peng, T.Y. ; Lo, C.K. ; Yao, Y.D. ; Tien, D.C. ; Chen, S.-Y.
Author_Institution :
Dept. of Mater. Sci., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A simple structure of Ta/CoFe/Os(d)/OsMn is deposited by HV sputtering system, where d varies from 0 to 2 nm. After deposition, all samples are subjected to magnetic field annealing at 1 kOe and at different temperatures for 30 minutes. No diffusion evidence is found from the Auger electron spectroscopy depth profile and magneto-optical Kerr effect measurements for samples with d=1 and 2 nm annealed below 300°C. This result suggests that the inserted osmium layer prevents Mn diffusion into the magnetic CoFe layer.
Keywords :
Auger electron spectra; Kerr magneto-optical effect; antiferromagnetic materials; cobalt alloys; coercive force; ferromagnetic materials; iron alloys; magnetic annealing; magnetic multilayers; magnetic thin films; manganese alloys; osmium; osmium alloys; surface diffusion; tantalum; thermal stability; 1 nm; 2 nm; 30 min; Auger electron spectroscopy depth profile; HV sputtering system; Ta-CoFe-Os-OsMn; deposition; diffusion; magnetic field annealing; magneto-optical Kerr effect measurements; osmium layer; thermal stability; Annealing; Electrons; Kerr effect; Magnetic field measurement; Magnetic films; Magnetooptic effects; Spectroscopy; Sputtering; Temperature; Thermal stability;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1463609
