Selective MOCVD growth of Fe3O4 epitaxial thin films for nanostructure

Fe₃O₄ thin films are grown using metalorganic chemical vapor deposition (MOCVD) on MgO, sapphires and quartz glass. It is observed that the substrate temperature, where the film growth of Fe₃O₄ occurs, is much higher for MgO and sapphire than for the substrates containing transition metal such as NiO. This indicates that the thin films can be selectively grown at a temperature only on the area modified by a thin layer having higher catalytic activity for oxygen adsorption than the other.