Title :
A comparison study of ESD protection for RFIC´s: performance vs. parasitics
Author :
Feng, H. ; Gong, K. ; Wang, A.Z.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
Abstract :
This paper reports two advanced Electro-Static Discharge (ESD) protection structures suitable for RFIC´s and a comparison study of influences of ESD parasitic capacitance (C/sub ESD/) on high-speed circuits. For a 4 GHz ring-oscillator and a low-power high-speed op-amp circuit, it was observed that C/sub ESD/ may corrupt high-speed performance significantly and new ESD structures can recover the corruption by 80%.
Keywords :
CMOS integrated circuits; MMIC; UHF integrated circuits; capacitance; electrostatic discharge; protection; 4 GHz; ESD parasitic capacitance; ESD protection structures; RFIC; electrostatic discharge protection; high-speed circuits; high-speed op-amp circuit; low-power op-amp circuit; onchip protection; ring-oscillator; Circuits; Computational modeling; Computer simulation; Design methodology; Electronic equipment testing; Electrostatic discharge; MOS devices; Parasitic capacitance; Partial discharges; Protection;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.860904
