Title :
Test results and irradiation performances of 3-D circuits developed in the framework of ATLAS hybrid pixel upgrade
Author :
Pangaud, P. ; Arutinov, D. ; Barbero, M. ; Breugnon, P. ; Chantepie, B. ; Clemens, J.C. ; Fei, R. ; Fougeron, D. ; Garcia-Sciveres, M. ; Godiot, S. ; Hemperek, T. ; Karagounis, M. ; Kruger, H. ; Mekkaoui, A. ; Perrot, L. ; Rozanov, S. ; Wermes, N.
Author_Institution :
Centre de Phys. des Particules de Marseille, Univ. de la Mediterranee Aix-Marseille II, Marseille, France
fDate :
Oct. 30 2010-Nov. 6 2010
Abstract :
Vertex detectors for High Energy Physics experiments require pixel detectors featuring high spatial resolution, very good signal to noise ratio and radiation hardness. A way to face new challenges of ATLAS/SLHC future hybrid pixel vertex detectors is to use the emerging 3-D Integrated Technologies. However, commercial offers of such technologies are only very few and the 3-D designer´s choice is then hardly constrained. Moreover, as radiation hardness and specially SEU tolerance of configuration registers is a crucial issue for SLHC vertex detectors and, as commercial data on this point are always missing, a reliable qualification program is to be developed for any candidate technology. We will present the design and test (including radiation tests with 70 kV, 60W X-Ray source and 24 GeV protons) of Chartered, 130nm Low Power 2-D chips realized for this qualification.
Keywords :
nuclear electronics; position sensitive particle detectors; semiconductor counters; 3D circuits; 3D integrated technologies; ATLAS future hybrid pixel vertex detectors; ATLAS hybrid pixel upgrade; SEU tolerance; SLHC future hybrid pixel vertex detectors; X-ray source; commercial data; configuration registers; high energy physics experiments; high spatial resolution; irradiation performances; low power 2D chips; radiation hardness; radiation tests; signal-to-noise ratio; Detectors; Latches; Layout; MOS devices; Pixel; Radiation effects; Transistors;
Conference_Titel :
Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE
Conference_Location :
Knoxville, TN
Print_ISBN :
978-1-4244-9106-3
DOI :
10.1109/NSSMIC.2010.5874036