Fabrication of high frequency passives on BiCMOS silicon substrates

Author

Volant, R. ; Groves, R. ; Malinowski, J. ; Subbanna, S. ; Begle, E. ; Laney, D. ; Larson, L. ; Sakamoto, G. ; Chan, P.

Author_Institution

IBM Microelectron., Hopewell Junction, NY, USA

Volume

1

fYear

2000

fDate

11-16 June 2000

Firstpage

209

Abstract

We describe a manufacturable process for the fabrication of microwave passive circuits on a high loss silicon substrate. This process, known as "Topside" allows for the fabrication of high frequency microwave transmission lines and inductors over the typical final metal layer of an integrated circuit. This process has been implemented on 200 mm (8 inch) silicon wafers with SiGe HBT\´s and CMOS devices. We describe for the first time the process details, as well as microstrip data on different thicknesses of metal.

Keywords

BiCMOS integrated circuits; MMIC; Q-factor; UHF integrated circuits; elemental semiconductors; inductors; integrated circuit manufacture; passive networks; silicon; substrates; CMOS devices; HF inductors; HF microwave transmission lines; HF passive component fabrication; Si; Si BiCMOS substrates; SiGe; SiGe HBT; Topside process; high frequency passives; high loss Si substrate; manufacturable process; microwave passive circuits; microwave passives; BiCMOS integrated circuits; Distributed parameter circuits; Fabrication; Frequency; Inductors; Manufacturing processes; Microwave devices; Microwave integrated circuits; Passive circuits; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.860944

Filename

860944