Hafnium nitride field emitter array for field emission amplifier

Author

Ikeda, Keita ; Miyata, Yuko ; Endo, Keisuke ; Gotoh, Yasuhito ; Tsuji, Hiroshi ; Ishikawa, Junzo

Author_Institution

Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan

fYear

2009

fDate

20-24 July 2009

Firstpage

81

Lastpage

82

Abstract

A field emitter array (FEA) is expected for operation under a server environment. We focused on hafnium nitride (HfN) for the cold cathode metal, because it possesses relative lower work function [1] and high resistance against oxidation at high temperature [2]. We have already reported fabrication of HfN-FEA and emission properties of HfN-FEA at high temperature [3], but we have not examined HfN-FEA as an active device. In this study, we evaluated HfN-FEA with the three constants of an electronic device, i.e. transconsductance (gm), collector resistance (rc), voltage amplification factor (mu).

Keywords

amplifiers; cathodes; field emission; field emitter arrays; hafnium compounds; HfN; active device; cold cathode metal; collector resistance; electronic device; field emission amplifier; field emitter array; oxidation; transconsductance; voltage amplification factor; Circuits; Field emitter arrays; Frequency; Hafnium; Insulation; Niobium; Societies; Temperature; Virtual colonoscopy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International

Conference_Location

Shizuoka

Print_ISBN

978-1-4244-3587-6

Electronic_ISBN

978-1-4244-3588-3

Type

conf

DOI

10.1109/IVNC.2009.5271834

Filename

5271834