Title :
RF loss and crosstalk on extremely high resistivity (10 k-1 M/spl Omega/-cm) Si fabricated by ion implantation
Author :
Wu, Y.H. ; Chin, A. ; Shih, K.H. ; Wu, C.C. ; Liao, C.P. ; Pai, S.C. ; Chi, C.C.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We have achieved 1.6 M/spl Omega/-cm resistivity using ion implantation that has little negative effect on MOS devices. Extremely low loss and cross coupling of 6.3 and -79 dB/cm (10 /spl mu/m gap) at 20 GHz are measured with 1 /spl mu/m Al, respectively, which is due to implant induced trap with /spl sim/1 ps carrier lifetime and stable to 400/spl deg/C.
Keywords :
MOS integrated circuits; VLSI; carrier lifetime; crosstalk; electron traps; elemental semiconductors; field effect MMIC; ion implantation; losses; silicon; 10 kohmcm to 1 Mohmcm; 20 GHz; 400 degC; MOS devices; RF loss; Si; carrier lifetime; crosstalk; implant induced trap; ion implantation; resistivity; Charge carrier lifetime; Conductivity; Coplanar transmission lines; Gallium arsenide; Ion implantation; Loss measurement; MOS devices; Power transmission lines; Protons; Radio frequency;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.860951
