Title :
1.3 μm VCSELs for fiber-optical communication systems
Author :
Riechert, H. ; Geelhaar, L. ; Ebbinghaus, G. ; Lima, A. ; Ramakrishnan, Abinesh
Author_Institution :
Corporate Res. Photonics & Commun., Fiber Opt., Infineon Technol., Munich, Germany
Abstract :
Optical data transmission will greatly benefit by taking the step from the transmission wavelength of 0.85 μm to 1.3 μm, since this will allow a much extended transmission distance at high data rates as well as greatly enhanced eye-safety. Vertical cavity surface emitting lasers (VCSELs) are key components for low-cost systems (such as Gb Ethernet). This paper therefore addresses the status of VCSELs emitting around 1.3 μm. The various approaches based on both GaAs- and InP-based active regions will be outlined and their respective advantages and drawbacks will be discussed. At present, devices based on InGaAsN-GaAs quantum wells offer the highest promise due to their superior optical output powers at both room temperature and at elevated temperatures. At the same time they benefit from the utilisation of standard GaAs/AlAs VCSEL technology.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; optical fibre communication; quantum well lasers; surface emitting lasers; wide band gap semiconductors; 1.3 μm VCSELs; 1.3 micron; GaAs-AlAs; GaAs-based active regions; GaAs/AlAs; InGaAsN-GaAs; InGaAsN-GaAs quantum wells; InP; InP-based active regions; enhanced eye-safety; extended transmission distance; fiber-optical communication systems; high data rates; low-cost systems; optical data transmission; superior optical output powers; Data communication; Ethernet networks; Fiber lasers; Optical devices; Optical fiber communication; Optical surface waves; Stimulated emission; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205299