Design guide of coupling between inductors and its effect on reverse isolation of a CMOS LNA

Author

Kim, C.S. ; Park, M. ; Kim, C.-H. ; Park, Mun-Yang ; Kim, S.-D. ; Youn, Y.-S. ; Park, J.-W. ; Han, S.-H. ; Yu, H.K. ; Cho, H.

Author_Institution

Micro-Electron. Tech. Lab., ETRI, Taejon, South Korea

Volume

1

fYear

2000

fDate

11-16 June 2000

Firstpage

225

Abstract

To establish the design guide on coupling between inductor pairs, we measured the magnitude of the electromagnetic coupling between inductors with the variation of physical separation and substrate resistivity. We also found that the coupling effect degrades the reverse isolation of L-band CMOS LNAs, and analyzed several LNAs fabricated with different fabrication technology. Furthermore, we proposed inductors for preventing the coupling, and its coupling reduction effect on the LNA is demonstrated.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; inductors; integrated circuit design; CMOS LNA; L-band; design guide; electromagnetic coupling; inductor pairs; inductors; physical separation; reverse isolation; substrate resistivity; CMOS technology; Conductivity; Coupling circuits; Electromagnetic coupling; Fabrication; Frequency; Inductors; L-band; Silicon; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.860952

Filename

860952