• DocumentCode
    3530313
  • Title

    Impact of Si-doping on the Eu+ luminescence in AlN: Eu phosphors

  • Author

    Dierre, B. ; Yuan, X.L. ; Inoue, K. ; Hirosaki, N. ; Takeda, T. ; Xie, R.J. ; Sekiguchi, T.

  • fYear
    2009
  • fDate
    20-24 July 2009
  • Firstpage
    61
  • Lastpage
    62
  • Abstract
    A serious obstacle for the development of full color field emission display (FED) devices is the lack of suitable blue luminescent materials with high luminance. Thus, the exploration of new blue-emitting phosphors is required. Rare-earth doped (oxy)nitride phosphors are considered as great candidates for phosphors in FEDs. Indeed, wavelength-tunable luminescence is obtained by doping with different rare-earth ions, varying the concentration of rare-earth and changing the host lattice composition. Thus, we have found that AlN codoped with Si and Eu exhibits a blue broadband emission. In comparison with Y2SiO5:Ce3+, AlN:Si,Eu shows higher luminescence efficiency, higher color purity, lower saturation behavior and longer lifetime. Thus, AlN:Si,Eu is a promising candidate for blue phosphor in FEDs. However, the exact role of Si is not clarified. It is required to understand the impact of Si for the enhancement of blue emission of AINEu phosphors.
  • Keywords
    aluminium compounds; europium; field emission displays; luminescence; phosphors; silicon; AlN:Eu; AlN:Si; Si-doping; blue broadband emission; blue luminescent materials; blue-emitting phosphors; color purity; full color field emission display devices; host lattice composition; rare-earth doped (oxy)nitride phosphors; rare-earth ions; saturation behavior; wavelength-tunable luminescence; Ceramics; Doping; Flat panel displays; Lattices; Luminescence; Materials science and technology; Phosphors; Photoluminescence; Powders; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
  • Conference_Location
    Shizuoka
  • Print_ISBN
    978-1-4244-3587-6
  • Electronic_ISBN
    978-1-4244-3588-3
  • Type

    conf

  • DOI
    10.1109/IVNC.2009.5271842
  • Filename
    5271842