Title :
SiGe bipolar technologies for low phase noise RF and microwave applications
Author :
Regis, M. ; Borgarino, M. ; Bary, L. ; Llopis, O. ; Graffeuil, J. ; Gruhle, A. ; Kovacic, S. ; Plana, R.
Author_Institution :
Lab. d´Autom. et d´Anal. des Syst., CNRS, Toulouse, France
Abstract :
This paper presents an overview of the low frequency noise performances of both "abrupt" and "gradual" SiGe HBTs. We demonstrated that when an appropriate device is used, a 1/f corner noise frequency of 1 kHz is obtained. We further presented a correlation with phase noise performances which outperform those reported for III-V devices.
Keywords :
1/f noise; Ge-Si alloys; UHF bipolar transistors; heterojunction bipolar transistors; microwave bipolar transistors; phase noise; semiconductor device models; semiconductor device noise; semiconductor materials; 1/f corner noise frequency; LF noise performances; SiGe; SiGe bipolar technologies; abrupt SiGe HBTs; gradual SiGe HBTs; low phase noise RF applications; low phase noise microwave applications; phase noise performance; Active noise reduction; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Microwave devices; Microwave technology; Noise figure; Phase noise; Radio frequency; Silicon germanium;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.860969
